⑤ 數(shù)據(jù)庫-半導(dǎo)體相關(guān)晶體的常數(shù)、能隙和物理性質(zhì)
發(fā)布時間：2020-06-09
Constants, Energy Gaps, and Physical Propertiesof Semiconductor related Crystals
Source: Sze, S.M., Physics of Semiconductor Device, Wiley Interscience Publication, 1981, pp. 848-849.
Material System | Element or Compound | Name | Structure1 | Lattice Constant(A) at 300 K | Band Gap(ev) at 300 K | Band2 |
IV | C | Carbon (diamond) | D | 3.56683 | 5.47 | I |
Ge | Germanium | D | 5.64613 | 0.66 | I | |
Si | Silicon | D | 5.43095 | 1.12 | I | |
Sn | Grey Tin | D | 6.48920 | 0.00 | D | |
IV-IV | SiC | Silicon carbide | W | a = 3.086, | 2.996 | I |
III-V | AlAs | Aluminum arsenide | Z | 5.6605 | 2.16 | I |
AlP | Aluminum phosphide | Z | 5.4510 | 2.45 | ||
AlSb | Aluminum antimonide | Z | 6.1355 | 1.58 | I | |
BN | Boron nitride | Z | 3.6150 | ~7.5 | I | |
BP | Boron phosphide | Z | 4.5380 | 2.0 | ||
GaAs | Gallium arsenide | Z | 5.6533 | 1.42 | D | |
GaN | Gallium nitride | W | a = 3.189, | 3.36 | ||
GaP | Gallium phosphide | Z | 5.4512 | 2.26 | I | |
GaSb | Gallium antimonide | Z | 6.0959 | 0.72 | D | |
InAs | Indium arsenide | Z | 6.0584 | 0.36 | D | |
InP | Indium phosphide | Z | 5.8686 | 1.35 | D | |
InSb | Indium antimonide | Z | 6.4794 | 0.17 | D | |
II-VI | CdS | Cadmium sulfide | Z | 5.8320 | 2.42 | D |
CdS | Cadmium sulfide | W | a = 4.16, | 2.42 | D | |
CdSe | Cadmium selenide | Z | 6.050 | 1.70 | D | |
CdTe | Cadmium telluride | Z | 6.482 | 1.56 | D | |
ZnO | Zinc oxide | R | 4.580 | 3.35 | D | |
ZnS | Zinc sulfide | Z | 5.420 | 3.68 | D | |
ZnS | Zinc sulfide | W | a = 3.82, | 3.68 | D | |
ZnSe | Zinc selenide | Z | 5.668 | 2.71 | D | |
ZnTe | Zinc telluride | Z | 6.103 | 2.393 | D | |
IV-VI | PbS | Lead sulfide | R | 5.9362 | 0.41 | I |
PbSe | Lead selenide | R | 6.126 | 0.27 | I | |
PbTe | Lead telluride | R | 6.4620 | 0.31 | I |
1. D = Diamond, W = Wurzite, Z = Zincblende, R = Rock Salt
2. I = Indirect, D = Direct
3. At ~ 2K.
Copyright © 2019 合肥科晶材料技術(shù)有限公司 版權(quán)所有 皖I(lǐng)CP備09007391號-1 
皖公網(wǎng)安備 34012302000974號
查看誠信檔案
